Datasheet Details
| Part number | AP2306GN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 101.81 KB |
| Description | N-channel enhancement mode power MOSFET |
| Datasheet | AP2306GN-HF_AdvancedPowerElectronics.pdf |
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Overview: AP2306GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS Compliant S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID D 20V 35mΩ 5.
| Part number | AP2306GN-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 101.81 KB |
| Description | N-channel enhancement mode power MOSFET |
| Datasheet | AP2306GN-HF_AdvancedPowerElectronics.pdf |
|
|
|
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial applications.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 +12 5.3 4.3 10 1.38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200902044 Free Datasheet http://www.datasheet4u.com/ AP2306GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A VGS=2.5V, ID=2.6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
| Brand Logo | Part Number | Description | Manufacturer |
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AP2306GN-HF | N-Channel MOSFET | VBsemi |
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AP2306GN | N-Channel MOSFET | VBsemi |
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AP2306AGN | N-Channel MOSFET | VBsemi |
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AP2306AGN-HF | N-Channel MOSFET | VBsemi |
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AP2306N | N-Channel MOSFET | VBsemi |
| Part Number | Description |
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| AP2306GN-HF-3 | N-channel Enhancement-mode Power MOSFET |
| AP2306GN | N-channel enhancement mode power MOSFET |
| AP2306AGEN | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2306AGEN-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2306AGN | N-channel enhancement mode power MOSFET |
| AP2306AGN-HF | N-channel enhancement mode power MOSFET |
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| AP2306N | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2301AGN | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |