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Advanced Power Electronics Corp.
AP2603GY-HF-3
P-channel Enhancement-mode Power MOSFET
Fast Switching Characteristics Low Gate Charge Small Footprint, Low Profile RoHS-compliant, halogen-free
D
BV DSS R DS(ON) ID
-20V 65mΩ -5.0A
G S
Description
S
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D D G D D
The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium.
SOT-26
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -20 ±12 -5 -4 -20 2 0.