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AP3310GH-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

This device is suited for low voltage and battery power applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP3310GH-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3310GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3310GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3310GJ-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3310GJ-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP3310GH/J-HF RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150mΩ -10A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252(H) This device is suited for low voltage and battery power applications. G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating - 20 +12 -10 -6.2 -24 25 0.