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AP3310GJ-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP3310GJ-HF, a member of the AP3310GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

This device is suited for low voltage and battery power applications.

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Datasheet preview – AP3310GJ-HF

Datasheet Details

Part number AP3310GJ-HF
Manufacturer Advanced Power Electronics
File Size 101.77 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP3310GJ-HF Datasheet
Additional preview pages of the AP3310GJ-HF datasheet.

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Full PDF Text Transcription

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AP3310GH/J-HF RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150mΩ -10A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252(H) This device is suited for low voltage and battery power applications. G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating - 20 +12 -10 -6.2 -24 25 0.
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