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AP3310GJ-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP3310GJ-HF datasheet PDF. This datasheet also covers the AP3310GH-HF variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

This device is suited for low voltage and battery power applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP3310GH-HF-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP3310GJ-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3310GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3310GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3310GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP3310GH-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP3310GH/J-HF RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150mΩ -10A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252(H) This device is suited for low voltage and battery power applications. G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating - 20 +12 -10 -6.2 -24 25 0.