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AP3403GH - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.

The TO-252/TO-251 package is universally used for all commercialindustrial application.

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AP3403GJ P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP3403GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 200mΩ - 10A Description G D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is universally used for all commercialindustrial application. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating - 30 ± 20 -10 -8.6 -48 36.7 0.