Datasheet Details
| Part number | AP3405GH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.48 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP3405GH-HF-AdvancedPowerElectronics.pdf |
|
|
Overview: AP3405GH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS pliant & Halogen-Free G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -30V 90mΩ -8.
| Part number | AP3405GH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 89.48 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP3405GH-HF-AdvancedPowerElectronics.pdf |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 +20 -8.6 -5.4 -20 10.4 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 12.0 62.5 Units ℃/W ℃/W 1 200908101 Data and specifications subject to change without notice AP3405GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AP3405 | 600mA Step-down DC/DC Converter | Diodes |
| Part Number | Description |
|---|---|
| AP3402GEH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3402GEJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3403GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP3403GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120CSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120SW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |