Datasheet Details
| Part number | AP4002P |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 280.05 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4002P AP4002S Datasheet (PDF) |
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Overview: AP4002S/P RoHS-pliant Product Advanced Power Electronics Corp.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | AP4002P |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 280.05 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4002P AP4002S Datasheet (PDF) |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for mercial-industrial surface mount applications and suited for power applications.The through-hole version (AP4002P) are available for low-profile applications.
G G D S TO-263(S) D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 2 8 20 0.16 2 Units V V A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 20 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 6.25 62 Units ℃/W ℃/W Data & specifications subject to change without notice 201019072-1/4 AP4002S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=1.0A VDS=VGS, ID=250uA VDS=10V, ID=2.0A VDS=600V, VGS=0V VGS=±30V ID=2A VDS=480V VGS=10V VDD=200V ID=1A RG=50Ω,VGS=10V RD=200Ω VGS=0V VDS=10V f=1.0MHz Min.
| Part Number | Description |
|---|---|
| AP4002H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002I-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002J-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002J-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002T | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002T-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |