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AP4224GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP4224GM
Manufacturer Advanced Power Electronics
File Size 124.99 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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AP4224GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N MOSFET Package ▼ RoHS Compliant SO-8 S1 G1 D1 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 30V 14mΩ 10A Description www.DataSheet4U.com The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 10 8 30 2 0.
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