Datasheet4U Logo Datasheet4U.com

AP4226GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP4226GM

Datasheet Details

Part number AP4226GM
Manufacturer Advanced Power Electronics
File Size 101.55 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP4226GM Datasheet
Additional preview pages of the AP4226GM datasheet.

📁 Similar Datasheet

  • AP4201 - LED Driver (AKM)
  • AP4202 - LED Driver (AKM)
  • AP4203 - LED Driver (AKM)
  • AP420N03SLG5 - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP4 - Acorn Pentode (Mullard)
  • AP400-B10 - AC Current transducer AP-B10 (LEM)
  • AP400-B420L - AC Current transducer AP-B420L (LEM)
  • AP400N08TLG1 - 85V N-Channel Enhancement Mode MOSFET (APM)
  • AP4010 - High Performance IR Enhanced P-Type Silicon Photodiodes (Antel Optronics)
  • AP4025 - High Performance IR Enhanced P-Type Silicon Photodiodes (Antel Optronics)
Other Datasheets by Advanced Power Electronics
  • AP4226GM-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4226AGM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4226D - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4226M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4224GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4224M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4228GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP4228GM-HF-3 - Dual N-channel Enhancement-mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
AP4226GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual N MOSFET Package SO-8 S1 G1 D2 D1 D1 G2 S2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 18mΩ 8.2A Description www.DataSheet4U.com The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 8.2 6.7 30 2 0.
Published: |