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AP4407F Datasheet P-channel Enhancement Mode

Manufacturer: Advanced Power Electronics Corp

Overview: AP4407F/I Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

G D S TO-220FM(F) The TO-220 isolation package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters and high current ,high speed switching circuits.

G D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 S TO-220CFM(I) Units V V A A A W W/ ℃ ℃ ℃ Rating -30 ±25 -50 -32 180 33.6 0.27 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

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