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AP4407F - P-CHANNEL ENHANCEMENT MODE

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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AP4407F/I Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 14mΩ -50A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-220FM(F) The TO-220 isolation package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters and high current ,high speed switching circuits.