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AP4407I Datasheet P-CHANNEL ENHANCEMENT MODE

Manufacturer: Advanced Power Electronics Corp

Download the AP4407I datasheet PDF. This datasheet also includes the AP4407F variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP4407F_AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

G D S TO-220FM(F) The TO-220 isolation package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters and high current ,high speed switching circuits.

G D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 S TO-220CFM(I) Units V V A A A W W/ ℃ ℃ ℃ Rating -30 ±25 -50 -32 180 33.6 0.27 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Overview

AP4407F/I Advanced Power Electronics Corp.

▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.