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AP4410M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching
www.DataSheet4U.com
D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
30V 13.5mΩ 10A
▼ Simple Drive Requirement
SO-8
S S S
ID
Description
D D
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G
G
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
S S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ± 25 10 8 50 2.