Datasheet Details
| Part number | AP4455GEH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 47.73 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4455GEH-HF-AdvancedPowerElectronics.pdf |
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Overview: AP4455GEH-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP4455GEH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 47.73 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4455GEH-HF-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-252 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 +25 -35 -22 -120 39 2 4 Units V V A A A W W mJ ℃ ℃ Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 50 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.2 62.5 Units ℃/W ℃/W 1 201107254 Data and specifications subject to change without notice AP4455GEH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-24A VGS=-4.5V, ID=-18A Min.
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