Datasheet Details
| Part number | AP4455GYT-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 57.67 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4455GYT-HF-AdvancedPowerElectronics.pdf |
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Overview: Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS pliant & Halogen-Free G AP4455GYT-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -30V 21mΩ -10.
| Part number | AP4455GYT-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 57.67 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4455GYT-HF-AdvancedPowerElectronics.pdf |
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S Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The PMPAK® 3x3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink.
D D D D S S S G PMPAK® 3x3 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range -30 +20 -10.6 -8.5 -40 3.57 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 5 35 Unit ℃/W ℃/W 1 201501263AP AP4455GYT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
| Part Number | Description |
|---|---|
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