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AP4506GEH - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP4506GEH
Manufacturer Advanced Power Electronics
File Size 140.53 KB
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP4506GEH RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance S1 G1 S2 G2 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS 30V 24mΩ 9A -30V 36mΩ -8A TO-252-4L RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 +20 9 7.2 50 3.1 -55 to 150 -55 to 150 P-channel -30 +20 -8 -6.
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