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AP4506GEM-HF - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness.

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Datasheet Details

Part number AP4506GEM-HF
Manufacturer Advanced Power Electronics
File Size 139.59 KB
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP4506GEM-HF Datasheet
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Full PDF Text Transcription

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AP4506GEM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance ▼ RoHS Compliant SO-8 S1 G1 D2 D1 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) G2 S2 30V 30mΩ 6.4A -30V 40mΩ -6A ID P-CH BVDSS RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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