AP4525GEH-HF Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. Units - - 1.8 V - 20 - ns - 15 - nC 2 AP4525GEH-HF P-CH @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Units BVDSS ΔBVDSS/ΔTj RDS(ON) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source...