Datasheet Details
| Part number | AP4525GEH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 84.98 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4525GEH-HF-AdvancedPowerElectronics.pdf |
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Overview: Advanced Power Electronics Corp. AP4525GEH-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance D1/D2 N-CH ▼ Fast Switching Performance ▼ RoHS.
| Part number | AP4525GEH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 84.98 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4525GEH-HF-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 40V 28mΩ 15A -40V 42mΩ -12A D2 S1 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 40 -40 ±16 ±16 15.0 -12.0 12.0 -10.0 50 -50 10.4 0.083 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 12 110 Unit ℃/W ℃/W 1 201501166 AP4525GEH-HF N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=6A VGS=4.5V, ID=4A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=6A Drain-Source Leakage Current VDS=40V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V Gate-Source Leakage VGS=±16V Total Gate Charge ID=6A Gate-Source Charge VDS=20V Gate-Drain ("Miller") Charge VGS=4.5V Turn-on Delay Time Rise Time Turn-off
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