AP4563AGH-HF
AP4563AGH-HF is N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
G1 G2
S1
40V 20mΩ 9.6A -40V 36mΩ -7.3A
D2
S2
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3 , VGS @ 10V Drain Current3 , VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
40 -40 +20 +20 9.6 -7.3 7.7 -5.8 40 -40
3.13 -55 to 150 -55 to 150
V V A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 6 40
Unit ℃/W ℃/W
1 201412193AP
N-CH Electrical Characteristics@ Tj=25o C(unless otherwise specified)
Symbol
Parameter...
