AP4563GH-HF datasheet by Advanced Power Electronics Corp.
| Part number | AP4563GH-HF |
|---|---|
| Datasheet | AP4563GH-HF-AdvancedPowerElectronics.pdf |
| File Size | 124.06 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Units - - 1.3 V - 20 - ns - 14 - nC 2 AP4563GH-HF P-CH @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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AP4563GH | Dual-Channel MOSFET | VBsemi |
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