AP4563GH-HF Description
TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Units - - 1.3 V - 20 - ns - 14 - nC 2 AP4563GH-HF P-CH @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A...