AP4563GH-HF Datasheet | Advanced Power Electronics Corp

Description TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 40V 30mΩ 8A -40V 36mΩ -7.3A D2 G1 G2 S1 S2 Absolute Maximum Ratings@Tj=25o C.(unless otherwise specified) Symbol Parameter Rating N-channel P-channel VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current , VGS @ 10V Drain Current3 , VGS @ 10V Drain Current3 , VGS @ 10V Pulsed Drain Current1 Total Power Dissipation 40 -40 +20 +20 30 -27 8.0 -7.3 6.3 -5.9 40 -40 Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Units V V A A A A W W/℃ ℃ ℃ Thermal Data Symbol Parameter Rthj-c (N-CH) Rthj-c (P-CH) Rthj-a Maximum Thermal Resistance, Junction-case3 Maximum Thermal Resistance, Junction-case3 Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 3.2 3 40 Units ℃/W ℃/W ℃/W 1...