AP4563GH datasheet by Advanced Power Electronics Corp.
| Part number | AP4563GH |
|---|---|
| Datasheet | AP4563GH_AdvancedPowerElectronics.pdf |
| File Size | 119.88 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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S1 TO-252-4L The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. 3.2 3 110 Units ℃/W ℃/W ℃/W Junction-ambient Data and specifications subject to change without notice 200617051-1/7 .. AP4563GH N-CH @Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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AP4563GH | Dual-Channel MOSFET | VBsemi |
View all Advanced Power Electronics Corp datasheets
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|---|---|
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| AP4500GM | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4500GM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
