AP4563GH - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power Electronics

Datasheet Details

Part number	AP4563GH
Manufacturer	Advanced Power Electronics
File Size	119.88 KB
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP4563GH Datasheet
Additional preview pages of the AP4563GH datasheet.

Product details

Description

S1 TO-252-4L The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.G1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±20 30 19 100 39 0.31 -55 to 150 -55 to 150 P-channel -40 ±20 -27

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Published: Mar 26, 2008 |