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AP4563GH Datasheet N And P-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: .. AP4563GH Pb Free Plating Product Advanced Power Electronics Corp.

General Description

S1 TO-252-4L The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

G1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±20 30 19 100 39 0.31 -55 to 150 -55 to 150 P-channel -40 ±20 -27 -17 -100 -41.7 -0.34 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c (N-CH) Rthj-c (P-CH) Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-case 3 3 3 Value Max.

Max.

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