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AP4563GM - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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Datasheet Details

Part number AP4563GM
Manufacturer Advanced Power Electronics
File Size 119.77 KB
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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www.DataSheet4U.com AP4563GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Fast Switching Performance ▼ RoHS Compliant D1 D2 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 S2 40V 30mΩ 6.7A -40V 36mΩ -6A P-CH BVDSS RDS(ON) ID SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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