AP4575GH-HF Datasheet | Advanced Power Electronics Corp

Description TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 60V 36mΩ 6.6A -60V 75mΩ -4.7A D2 S2 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3 Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 60 -60 +20 +20 6.6 -4.7 5.3 -3.8 20 -20 3.13 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 6 40 Unit ℃/W ℃/W 1 201501162 N-CH Electrical Characteristics@ Tj=25o C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS=0V, ID=250u A VGS=10V, ID=6A VGS=4.5V, ID=4A Gate Threshold...