Datasheet Details
| Part number | AP4575GH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 84.62 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4575GH-HF-AdvancedPowerElectronics.pdf |
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Overview: Advanced Power Electronics Corp. AP4575GH-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance D1/D2 ▼ Fast Switching Performance ▼ RoHS pliant &.
| Part number | AP4575GH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 84.62 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4575GH-HF-AdvancedPowerElectronics.pdf |
|
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TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 60V 36mΩ 6.6A -60V 75mΩ -4.7A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3 Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 60 -60 +20 +20 6.6 -4.7 5.3 -3.8 20 -20 3.13 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 6 40 Unit ℃/W ℃/W 1 201501162 AP4575GH-HF N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=4A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance Drain-Source Leakage Current VDS=10V, ID=5A VDS=48V, VGS=0V Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=+20V, VDS=0V ID=5A VDS=48V VGS=4.5V VDS=30V ID=5A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz Gate Resistance f=1.0MHz Min.
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|---|---|---|---|
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