Datasheet Details
| Part number | AP4575M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 165.09 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4575M_AdvancedPowerElectronics.pdf |
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Overview: .. AP4575M Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) G2 G2 S2 S2 S1 G1 G1 S1 60V 36mΩ 6A -60V 72mΩ -4.
| Part number | AP4575M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 165.09 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4575M_AdvancedPowerElectronics.pdf |
|
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
ID P-CH BVDSS RDS(ON) ID D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 60 ±20 6 4.7 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -60 ±20 -4.2 -3.3 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AP4575GM | Dual-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
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| AP4578GM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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