AP4578GD
Description
PDIP-8
G2 S2 G1
S1
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
60V 64mΩ 4.5A -60V 125mΩ
-3A
D1 D2
G1 G2 S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating
N-channel P-channel 60 -60
±20 ±20 4.5 -3
3.6 20
-2.4 -20
0.016 -55 to 150
-55 to 150
Max.
Value 62.5
Units
V V A A A W W/℃ ℃ ℃
Unit ℃/W
Data and specifications subject to change without...
