Datasheet Details
| Part number | AP4578GD |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 82.98 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4578GD-AdvancedPowerElectronics.pdf |
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Overview: Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package D2 D2 D1 D1 ▼ RoHS.
| Part number | AP4578GD |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 82.98 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4578GD-AdvancedPowerElectronics.pdf |
|
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PDIP-8 G2 S2 G1 S1 The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
AP4578GD Pb Free Plating Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 60V 64mΩ 4.5A -60V 125mΩ -3A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating N-channel P-channel 60 -60 ±20 ±20 4.5 -3 3.6 20 2.0 -2.4 -20 0.016 -55 to 150 -55 to 150 Max.
Value 62.5 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 200616051-1/7 AP4578GD N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
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