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AP4578M Datasheet N And P-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: AP4578M Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance D2 D2 D2 D1 D2 D1 D1.

General Description

SSOO--88 G2 G2 S2 G1 S2 SS11 G1 The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

The SO-8 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 60V 64mΩ 4.5A -60V 125mΩ -3A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating N-channel P-channel 60 -60 ±20 ±20 4.5 -3 3.6 -2.4 20 -20 2.0 0.016 -55 to 150 -55 to 150 Max.

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