AP4578M
Description
SSOO--88
G2 G2 S2 G1 S2 SS11 G1
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
G1 G2 S1
60V 64mΩ 4.5A -60V 125mΩ
-3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating N-channel P-channel
60 -60 ±20 ±20 4.5 -3 3.6 -2.4 20 -20
2.0 0.016 -55 to 150 -55 to 150
Max.
Value...
