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AP4880BGM-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet preview – AP4880BGM-HF

Datasheet Details

Part number AP4880BGM-HF
Manufacturer Advanced Power Electronics
File Size 57.18 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP4880BGM-HF Datasheet
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Full PDF Text Transcription

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AP4880BGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant Description D D D D G BVDSS RDS(ON) ID S S 30V 9mΩ 13A SO-8 S D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 13 10 50 2.
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