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AP4880M Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

G G The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

S S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 ± 20 13 10 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.

Overview

www.DataSheet4U.com AP4880M Advanced Power Electronics Corp.

▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 25V 8.

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