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AP4951GM-HF-3 - Dual P-channel Enhancement-mode Power MOSFETs

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Part number AP4951GM-HF-3
Manufacturer Advanced Power Electronics
File Size 85.84 KB
Description Dual P-channel Enhancement-mode Power MOSFETs
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G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The AP4951GM-HF-3 is in the popular SO-8 surface-mount package and is well-suited for use in low-voltage DC/DC conversion and general load-switching applications.G2 S1 S2 D2 D2 D1 D1 SO-8 (M) G2 S2 G1 S1 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source

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