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AP4951GM-HF-3 Datasheet Dual P-channel Enhancement-mode Power MOSFETs

Manufacturer: Advanced Power Electronics Corp

General Description

G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The AP4951GM-HF-3 is in the popular SO-8 surface-mount package and is well-suited for use in low-voltage DC/DC conversion and general load-switching applications.

G2 S1 S2 D2 D2 D1 D1 SO-8 (M) G2 S2 G1 S1 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Rating -60 ±20 -3.4 -2.7 -20 2 0.016 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W W/°C °C °C Unit °C/W Ordering Information AP4951GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel ©2010 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free BVDSS R DS(ON) ID D1 -60V 96mΩ -3.