AP4955GM Description
TThe Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. 62.5 Unit ℃/W Data and specifications subject to change without notice 200303041 .. AP4955GM @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min.