AP4P016I datasheet by Advanced Power Electronics Corp.
| Part number | AP4P016I |
|---|---|
| Datasheet | AP4P016I-AdvancedPowerElectronics.pdf |
| File Size | 179.99 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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AP4P016 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID4 -40V 16mΩ -36A GD S TO-220CFM(I) The TO-220CFM package is widely preferred for all mercialindustrial through hole applications.
View all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP4P018M | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002I-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002J-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002J-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4002S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
