AP60L02S Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02P) is available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Rating 25 ± 20 50 32 180 62.5 0.5 Units V V A A A W W/ ℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Unit ℃/W ℃/W Data & specifications subject to change without notice AP60L02S/P Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 25 1 - Typ. 0.037 Max. Units 12 26 3 1 25 ±100 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) .. Static Drain-Source On-Resistance VGS=10V, ID=25A VGS=4.5V, ID=20A 30 21 2.8 16 8 75 22 20 605 415 195 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250u A VDS=10V, ID=25A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= ± 20V ID=25A VDS=20V VGS=5V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source...