AP60N03S Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03P) is available for low-profile applications. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Rating 30 ± 20 55 35 215 62.5 0.5 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Unit ℃/W ℃/W Data & specifications subject to change without notice Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 30 1 - Typ. 0.037 Max. Units 13.5 20 3 1 25 ±100 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) .. Static Drain-Source On-Resistance VGS=10V, ID=28A VGS=4.5V, ID=22A 11.5 18 30 22.4 2.7 14 7.4 81 24 18 950 440 145 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250u A VDS=10V, ID=28A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=28A VDS=24V VGS=5V VDS=15V ID=28A RG=3.3Ω,VGS=10V RD=0.53Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Forward Leakage Total Gate Charge Gate-Source Charge...