AP60N2R5H
Description
AP60N2R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
VDS @ Tj,max. RDS(ON) ID
650V 2.5Ω 3.5A
TO-252(H)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
600 V
VGS Gate-Source Voltage
+20 V
ID@TC=25℃
Drain Current, VGS @ 10V
3.5 A
ID@TC=100℃ IDM
Drain Current, VGS @ 10V Pulsed Drain Current1
2.2 A 14 A
PD@TC=25℃
Total Power Dissipation
56.8 W
PD@TA=25℃ EAS
Total Power Dissipation Single Pulse Avalanche Energy4
2W 8 m J
TSTG
Storage Temperature Range
-55 to 150
℃
TJ Operating Junction Temperature Range
-55 to...
