AP60N2R5I
Description
AP60N2R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all mercialindustrial through hole applications. The mold pound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON) ID3
650V 2.5Ω 3.5A
G DS
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
600 V
VGS ID@TC=25℃ ID@TC=100℃ IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
+20 V 3.5 A 2.2 A 14 A
PD@TC=25℃
Total Power Dissipation
26 W
PD@TA=25℃ EAS
Total Power Dissipation Single Pulse Avalanche Energy4
1.92 W 8 m J
TSTG
Storage...
