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AP6680BGMT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP6680B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – AP6680BGMT

Datasheet Details

Part number AP6680BGMT
Manufacturer Advanced Power Electronics
File Size 69.45 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP6680BGMT Datasheet
Additional preview pages of the AP6680BGMT datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP6680BGMT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink D ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G Description S AP6680B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) ID 30V 9mΩ 41.4A D D D D S S S G PMPAK® 5x6 Absolute Maximum Ratings .
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