AP6680BGMT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp
General Description
AP6680B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
Full PDF Text Transcription for AP6680BGMT (Reference)
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Advanced Power Electronics Corp. AP6680BGMT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink D ▼ Lo...
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SFET ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink D ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G Description S AP6680B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) ID 30V 9mΩ 41.4A D D D D S S S G PMPAK® 5x6 Absolute Maximum
AP6680BGMT Datasheet
