AP6925GY Overview
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra lower on-resistance and cost-effectiveness. Units -1.2 V Schottky Characteristics@Tj=25oC Symbol VF Ir Parameter Forward Voltage Drop Reverse Leakage Current Test Conditions IF=500mA IF=1A Vr=16V Min. Units 0.45 0.5 400 V V uA Notes:.