Datasheet Details
| Part number | AP6925GY |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 156.33 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP6925GY-AdvancedPowerElectronics.pdf |
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Overview: AP6925GY RoHS-pliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Surface Mount Package ▼ RoHS pliant SOT-26 A K D NC P-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) G S -16V 150mΩ - 1.
| Part number | AP6925GY |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 156.33 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP6925GY-AdvancedPowerElectronics.pdf |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra lower on-resistance and cost-effectiveness.
G S K Absolute Maximum Ratings Symbol VDS VKA VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C TSTG TJ o o o Parameter Drain-Source Voltage Reverse Voltage (Schottky) Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -16 20 +8 -1.6 -1.2 -6 0.55 0.005 -55 to125 -55 to 125 Units V V V A A A W W/ ℃ o C o Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 3 Unit o o 180 180 C/W C/W Maximum Thermal Resistance, Junction-ambient (Schottky) Data and specifications subject to change without notice 1 200808072 AP6925GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min.
-16 -0.3 - Typ.
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