AP6950GYT-HF datasheet by Advanced Power Electronics Corp.
| Part number | AP6950GYT-HF |
|---|---|
| Datasheet | AP6950GYT-HF-AdvancedPowerElectronics.pdf |
| File Size | 132.26 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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G2 Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. Units - - 1.2 V - 13 - ns - 6 - nC 2 AP6950GYT-HF CH-2 @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, ID=250uA Static Drain-Source On-Resistance2 VGS=10V, ID=11A 30.
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