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AP6982GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Full PDF Text Transcription for AP6982GM (Reference)

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Advanced Power Electronics Corp. AP6982GM Pb Free Plating Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ Surfa...

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WER MOSFET ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ Surface Mount Package D2 D2 D2 D1 D2 D1 D1 D1 Description SO-8 SO-8 G2 G2 S2 G1 S2 S1S1 G1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. CH-1 CH-2 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 30V 18mΩ 8.5A 30V 26mΩ 7.