Click to expand full text
AP6982M
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package
D2 D2 D2 D1 D2 D1 D1 D1 G2 G2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
CH-1
BVDSS RDS(ON) ID
30V 18mΩ 8.8A 30V 25mΩ 7.5A
SO-8 SO-8
S2 G1 S2 S1 G1 S1
CH-2
BVDSS RDS(ON) ID
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1
D1
D2
G2 S1 S2
Absolute Maximum Ratings
http://www.DataSheet4U.net/
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 30 ±25 8.8 7 30 2.0 0.