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AP75T10GP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP75T10GP datasheet PDF. This datasheet also covers the AP75T10GS variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP75T10GS-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP75T10GP-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP75T10GP-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP75T10GI-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP75T10GI-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP75T10GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP75T10GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 100V 15mΩ 72A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP75T10GP) are available for low-profile applications.