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AP88L02P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP88L02P datasheet PDF. This datasheet also covers the AP88L02S variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP88L02S-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP88L02S N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP88N30W N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP88N30W-HF-3 N-channel Enhancement-mode Power MOSFET
AP80N03GP-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP80N03GS-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power Electronics Corp. AP88L02S/P N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Description G D S BVDSS RDS(ON) ID 25V 5mΩ 88A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP88L02P) is available for low-profile applications.