AP9563GK Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -40 ±25 -6.8 -5.4 -30 2.8 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Value Max. 45 Unit ℃/W Data and specifications subject to change without notice 200914051-1/4 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250u A Min. -40 -1 - Typ. -0.03 10 20 4 10 12 6 70 36 240 185 5.8 Max. Units 40 60 -3 -1 -25 ±100 30 8.7 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1m A RDS(ON) .. Static Drain-Source On-Resistance VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25o C) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250u A VDS=-10V, ID=-6A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=±25V ID=-6A VDS=-32V VGS=-4.5V VDS=-20V ID=-1A RG=3.3Ω,VGS=-10V RD=20Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 1600 2560 Source-Drain...