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AP9575AGJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The TO-251 package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP9575AGJ RoHS-compliant Product Advanced Power Electronics Corp. ▼ Higher Gate-Source Voltage ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 64mΩ -17A Description The TO-251 package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters. G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 ±30 -17 -11 -60 36 0.