AP9575H Datasheet | Advanced Power Electronics Corp

Description The TO-252 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575J) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Rating -60 ±25 -15 -9.5 45 36 0.29 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.5 110 Units ℃/W ℃/W Data and specifications subject to change without notice AP9575H/J Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250u A Min. -60 -1 - Typ. -0.06 Max. Units 90 120 -3 -1 -25 ±100 27 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1m A RDS(ON) .. Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A VGS=-4.5V, ID=-9A 14 17 5 6 10 19 46 53 160 100 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250u A VDS=-10V, ID=-9A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS= ±25V ID=-9A VDS=-48V VGS=-4.5V VDS=-30V ID=-9A RG=3.3Ω,VGS=-10V RD=3.3Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer...