Datasheet Details
| Part number | AP98T03GW-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 53.89 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP98T03GW-HF-AdvancedPowerElectronics.pdf |
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Overview: AP98T03GW-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP98T03GW-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 53.89 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP98T03GW-HF-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G The TO-3P package is widely preferred for mercial-industrial surface mount applications and suited for higher voltage applications such as SMPS.
D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 Rating 30 +20 145 80 80 320 104 -55 to 150 -55 to 150 Units V V A A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 40 Units ℃/W ℃/W Data and specifications subject to change without notice 1 201001251 AP98T03GW-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.5V, ID=30A Min.
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