Datasheet Details
| Part number | AP98T06GI-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 90.21 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP98T06GI-HF-AdvancedPowerElectronics.pdf |
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Overview: AP98T06GI-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP98T06GI-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 90.21 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP98T06GI-HF-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for mercial-industrial through hole applications.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 60 +20 67 42 260 41.6 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 3 65 Units ℃/W ℃/W 1 200910191 Data and specifications subject to change without notice AP98T06GI-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=48V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=48V VGS=10V VDS=30V ID=40A RG=1Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min.
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