Datasheet Details
| Part number | AP98T06GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 54.26 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP98T06GP-HF-AdvancedPowerElectronics.pdf |
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Overview: AP98T06GP-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP98T06GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 54.26 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP98T06GP-HF-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is widely preferred for mercial-industrial through-hole applications.
G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 60 +20 80 320 250 4 Units V V A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 45 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.5 62 Units ℃/W ℃/W 1 201309164 Data and specifications subject to change without notice AP98T06GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=48V, VGS=0V VGS= +20V, VDS=0V ID=30A VDS=48V VGS=10V VDS=30V ID=30A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min.
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