Datasheet4U Logo Datasheet4U.com

AP9924AGO-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP9924AGO-HF

Datasheet Details

Part number AP9924AGO-HF
Manufacturer Advanced Power Electronics
File Size 115.88 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9924AGO-HF Datasheet
Additional preview pages of the AP9924AGO-HF datasheet.

📁 Similar Datasheet

  • AP9926A - 20V N+N-Channel Enhancement Mode MOSFET (APM)
  • AP9971AGM - Dual N-Channel MOSFET (VBsemi)
  • AP9971GH - N-Channel MOSFET (VBsemi)
  • AP9971GI-HF - N-Channel 60V MOSFET (VBsemi)
  • AP9972GS - N-Channel 60V MOSFET (VBsemi)
  • AP9974AGP - N-Channel 60V MOSFET (VBsemi)
  • AP9974GP - N-Channel 60-V MOSFET (VBsemi)
  • AP9980GM-HF - N-Channel 80V MOSFET (VBsemi)
  • AP9997GH - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • AP9997GK - N-Channel 100V MOSFET (VBsemi)
Other Datasheets by Advanced Power Electronics
  • AP9924GO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9920GEO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9922EO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926EM-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926EO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926GEM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926GEO-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP9924AGO-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Halogen Free & RoHS Compliant Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S2 G2 20V 22mΩ 5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D S2 G1 TSSOP-8 S1 D S1 D D G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 +8 5 4 20 0.
Published: |