Datasheet Details
| Part number | AP9926EO |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 117.88 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP9926EO_AdvancedPowerElectronics.pdf |
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Overview: AP9926EO Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low .. drive current ▼ Surface mount package D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S1 D1 G1 S1 20V 28mΩ 4.
| Part number | AP9926EO |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 117.88 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP9926EO_AdvancedPowerElectronics.pdf |
|
|
|
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 ± 12 4.6 3.7 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.
125 Unit ℃/W Data and specifications subject to change without notice 20112502 AP9926EO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AP9926A | 20V N+N-Channel Enhancement Mode MOSFET | APM |
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