Datasheet4U Logo Datasheet4U.com

AP9926EO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP9926A 20V N+N-Channel Enhancement Mode MOSFET APM
AP9971AGM Dual N-Channel MOSFET VBsemi
AP9971GH N-Channel MOSFET VBsemi
AP9971GI-HF N-Channel 60V MOSFET VBsemi
AP9972GS N-Channel 60V MOSFET VBsemi

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP9926EM-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926GEM N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926GEO-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926GM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP9926EO Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low www.DataSheet4U.com drive current ▼ Surface mount package D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S1 D1 G1 S1 20V 28mΩ 4.6A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 ± 12 4.6 3.7 20 1 0.