AP9926O Overview
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 125 Unit ℃/W Data and specifications subject to change without notice 20071902 AP9926O @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Units 28 40 1 25...
